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A 30kVA SiC MOSFET inverter is designed and evaluated for 180°C ambient temperature operation. The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. The power structure is designed using SiC MOSFETs and HT capacitors. The gate driver circuits with protections are also designed for the HT environment. The prototype has been...
This paper presents a new power semiconductor IGBT module family dedicated for Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) power-train inverter applications, especially for higher power requirements. The new IGBT module family adopts a 6-in-1 circuit configuration with an optimized internal layout, Direct Lead Bond (DLB) structure and an integrated Al fin for direct liquid cooling. As...
Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired...
Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because...
The layout of power modules is one of the key points in power module design. In this paper, along with design examples, an improved automatic layout method for planar power module is presented. Some practical considerations and implementations are introduced in the optimization procedure.
This paper introduces the development and experimental performance of SiC-Based high power density inverter. The Power density of the developed inverter is about 70kW/litter in volumetric, 50kW/kg in gravimetric. The inverter is forced air cooled 2-level voltage source inverter. In order to achieve higher power density than conventional inverters, we need to reduce losses of inverters or improve cooling...
This paper presents an integrated power module with the features of high power density and high efficiency. A multi-functional integrated magnetic component is designed. The component has the roles of both the filter inductor and the case of the whole power module. With the assist of finite element analysis (FEA), design and optimization of the proposed inductor are demonstrated. It has higher inductance...
This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self...
This paper deals with comparative assessment through static and dynamic measurements performed for full SiC-based MOSFET and Si-based IGBT power modules. The full SiC-MOSFET and Si-IGBT based power modules all have an identical voltage rating of 1.7 kV and a current rating of 300 A. Full SiC-MOSFETs presents a lowest on-resistance (RON) of 10.0 mΩ, blocking voltage of 1800 V and a threshold voltage...
The reliability of power modules is closely depended on their electrical and thermal behavior in operation. As power modules are built to operate more integrated and faster, the electrical parasitic and thermal stress issues become more critical. This paper investigates simplified thermal and parasitic inductance models of SiC power modules. These models can replace the models by Finite Element Methods...
This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic...
During standard robustness evaluations of a NPC type 2 IGBT power module a non-described effect in a Three Level NPC 2 topology was observed. A full description of that effect can help to protect IGBT power modules in this topology against blow ups and can help in a post mortem analysis to understand the reason for this. With a full understanding of that effect the lifetime of the inverter can be...
Power density of converters have been dramatically increased through the innovations of packaging and integration technologies. Meanwhile, it also imposes more challenges on the thermal performances. An integrated power module packaged with magnetic component is proposed to improve both electrical and thermal performances. This paper presents the thermal analysis of the proposed power module. The...
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to source the power module from the two ends, not only shortens the equivalent power loops but also provides a symmetrical structure for the paralleled devices. The proposed design achieved...
Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic...
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