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In this paper, we present a design and benchmarking methodology of Spin Wave Device (SWD) circuits based on micromagnetic modeling. SWD technology is compared against a 10nm FinFET CMOS technology, considering the key metrics of area, delay and power. We show that SWD circuits outperform the 10nm CMOS FinFET equivalents by a large margin. The area-delay-power product (ADPP) of SWD is smaller than...
Recently, several molecular devices have been realized with interesting properties like conductance, switching, gate modulation and negative differential resistance. In this paper we present a new modular framework based on VHDL-AMS that allows a comparison among different Molecular-FET models in terms of capability to capture an accurate I–V characteristics. It also allows to analyze the impact of...
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