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A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.
This paper presents a high-linearity and high-gain power amplifier for 802.11p standard. The power amplifier is fabricated using InGaP/GaAs HBT technology and packaged in a 5×5mm QFN. A stand-alone integrated passive device (IPD) chip is exploited as the output matching network in the same package. The measured power gain is 25.8 dB at 5 V supply. With a 27 Mbps IEEE 802.11p signal at the center frequency...
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