The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report highly-nonlinear ultrathin metasurfaces based on coupling of plasmonic nanoresonators with intersubband nonlinearities. Nonlinear susceptibilities over 1×106 pm/V and conversion efficiencies ∼0.1% were measured for second harmonic generation in mid-infrared for 10 kW/cm2 input intensity. Complete phase control of local nonlinear response is demonstrated.
A new quantum well, namely InGaAsP/InAlGaAs, is used for electroabsorption modulator. High band-offset ratio between well and barrier induces strong exciton effect, leading to low fiber-to-fiber loss of −8dB, >25dB extinction ratio, and >30GHz bandwidth.
Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect...
We report color-conversion of InGaN LEDs and lasers using an AlInGaP multi-quantum-well nanomembrane. In particular, we demonstrate free-space OOK data transmission at 180 Mb/s from a laser diode blue-to-red converted by a heterogeneous nanomembrane/sapphire lens assembly.
Impurity Free Quantum Well Intermixing (IFQWI) by cap layer thickness variation for InGaAsP/InP multiquantum wells (MQWs) is reported for the first time. The blue-shift is observed to be enhanced or inhibited depending on the thickness of the ZrO2 cap layer used (100–600nm) for anneal conditions of 600–750°C for 40s. The group-V intermixing in InGaAsP/InP dominates the IFQWI resulting in a blue-shift...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.