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We study the nonlinearity in a modified unitraveling-carrier (MUTC) photodetector with a drift-diffusion model. We show that the Franz-Keldysh effect has a strong effect on the third-order intermodulation distortion (IMD3).
Over the past few decades optical pulse shaping has become an integral part of numerous photonic systems, impacting applications from optical communications to RF-photonic filtering [1]. In a parallel line, driven primarily by the need for broadband mass transmission of information, the technology behind photonic integration on the InP platform has continued to advance at a remarkable rate [2]. Leveraging...
Aurrion heterogeneous platform combines best-in-class active III–V materials for lasers, modulators and photodetectors with advanced passive components on a single chip. By leveraging existing silicon industry infrastructure for manufacturing and packaging, low-cost photonics can be closely integrated with electronics in system-in-package solutions. Such solutions are well suited to meet the demands...
Non-linear properties of quantum-dot and quantum-dash lasers under dual-mode optical injection are investigated experimentally, showing higher nonlinearity of quantum-dash lasers. Frequency response measurements show equal 3 dB modulation bandwidth of 8 GHz.
Mach-Zehnder electro-optic modulators with MQW cores fabricated using conventional processing techniques without bonding and substrate removal are reported. Under 10 V reverse bias push-pull Vπ is 1.1 V and insertion loss can be under 6 dB.
There are a growing number of RF photonics applications. In these systems photodiodes with high saturation current and high linearity enable high link-gain, low noise figure, and high dynamic range. To date, the best performance has been achieved with charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes. This talk will describe the design and performance characteristics of these...
Impurity Free Quantum Well Intermixing (IFQWI) by cap layer thickness variation for InGaAsP/InP multiquantum wells (MQWs) is reported for the first time. The blue-shift is observed to be enhanced or inhibited depending on the thickness of the ZrO2 cap layer used (100–600nm) for anneal conditions of 600–750°C for 40s. The group-V intermixing in InGaAsP/InP dominates the IFQWI resulting in a blue-shift...
InAsP quantum dot (QD) lasers emitting between 660–775nm with 300K threshold current density of 260 Acm−2 for 2mm long uncoated facet devices and operation up to 380K are compared to InP QD lasers emitting at shorter wavelength.
We present a CMOS integrated optical receiver having under-damped transimpedance amplifier (TIA) and CMOS avalanche photodetector (APD) realized in 65-nm CMOS technology. The under-damped TIA compensates the bandwidth limitation of CMOS APD and provides enhanced receiver bandwidth performance with reduced power consumption and better sensitivity compared to previously reported techniques. We successfully...
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