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We differentiate the spacer-dependent peak shift in coupled and decoupled super absorbing metasurfaces based on magnetic resonance and interference mechanism, respectively, which was experimentally validated by low-cost structures fabricated by lithography-free processes.
We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
Impurity Free Quantum Well Intermixing (IFQWI) by cap layer thickness variation for InGaAsP/InP multiquantum wells (MQWs) is reported for the first time. The blue-shift is observed to be enhanced or inhibited depending on the thickness of the ZrO2 cap layer used (100–600nm) for anneal conditions of 600–750°C for 40s. The group-V intermixing in InGaAsP/InP dominates the IFQWI resulting in a blue-shift...
The crack-free and low surface roughness of Ta2O5 film has been deposited by magnetron sputtering technique. The propagation loss of 1.5 dB/cm with the total coupling loss of 3.2 dB for the Ta2O5 based channel waveguide with inverse taper structure has been successfully demonstrated.
We report a high efficiency normal incidence coupling Ge/Si photodiode formed by direct bonding. The devices exhibit high responsivity up to ∼12A/W at 1.54µm and are suitable for imaging applications. We attribute the enhanced gain to surface trap states between Ge and Si.
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