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In order to design and fabricate low profile (slim) LLC resonant converters, it is essential to replace conventional wire-wound magnetic transformers with low profile planar ones. In planar transformers, to decrease high-frequency AC resistance and to get high power efficiency, the primary and secondary PCBs are stacked together using the interleave structure method, which leads to a high amount of...
This paper describes a fast protection circuit for silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs) subjected to hard-switching faults (HSFs). In terms of reliability of power converters, the protection of power semiconductors against short-circuit failures is of great concern. The reverse transfer capacitance increases with decreasing drain-source voltage during normal...
This paper proposes a low cost gate driver of Silicon Carbide (SiC) MOSFET with a passive triggered auxiliary transistor in a phase-leg configuration. Silicon Carbide MOSFET can work on high blocking voltage and high switching frequency with less temperature drift. However, high switching speed may amplify the negative influence of parasitic components and produce significant voltage spikes during...
The switching transient properties of conventional power semiconductors (Silicon MOSFET and IGBT) have been proposed for online junction temperature (Tj) sensing. This method utilizes the semiconductor Tj dependent characteristics and the gate drive output dynamics. In this paper, the method is applied to wide bandgap power semiconductor, Silicon-Carbide (SiC) MOSFET. In order to demonstrate the SiC...
With the development of SiC technology, current rating of the latest SiC MOSFET module goes up to 300A and the gate charge becomes higher than 1000nC, which demands a high gating current to drive the power module. To explore the high current and high temperature (HT) potentials of the SiC MOSFET module, a gate driver circuit with high output current and HT capability is developed. In this paper, particular...
In this paper, a center-tapped transformer based bidirectional dc-dc converter with full ZVS operating range is proposed for wide input voltage range applications. The soft switching analysis in different modes is carried out and a simple and effective control strategy, allowing extending the practical ZVS to the whole operating range, is proposed. By dynamically adjusting the phase-shift angle between...
Integration of functions and features into silicon circuits is very important for a new power circuit design in order to reduce the electronic bill of material's (eBOM) cost and component count. These eBOM reductions increase the reliability and decrease the cost and size of a product. A low cost power micro-inverter using two application specific integrated circuits, analog power manager (APM) and...
This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
SiC devices have a great potential to work in high temperature (HT) environment. To protect SiC MOSFET in HT environment, this paper presents a de-saturation protection and under voltage lock out circuit using commercially available discrete transistors rated at 200°C. A discussion on integrated circuit (IC) solution and discrete circuit solution is presented to evaluate feasibility and benefit to...
Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This...
Power semiconductor devices are the major cause of the power converter failures together with the electrolytic dc bus capacitors. In harsh operating environments, the power devices are subjected to various mechanical and electrical stresses, wear, and vibration that contribute to increased equipment failure rate, where a failed component can cause unexpected interruptions, serious safety issues, or...
Based on the hybrid operation of interleaved flyback micro-inverter in Discontinuous and Boundary Conduction Modes (DCM and BCM), a novel adaptive snubber is proposed in this paper. The proposed snubber limits the drain-to-source voltage overshoot of the flyback's main switch during the turn-off process, enabling the use of lower voltage MOSFETs. It also recovers the stored energy in the leakage inductance...
Wireless power transmission (WPT) using magnetic resonance has been attracting increasing attention from power electronics engineers and industry. A number of studies have investigated WPT circuits based on magnetic resonance and have verified the high-efficiency power transmission characteristics of such circuits. However, a 10-MHz-class high-frequency power supply suitable for high-power transmission...
The temperature and dV/dt dependence of false turn-ON has been analyzed for Silicon Carbide (SiC) Unipolar and Silicon Bipolar transistors, with switching rates varied by the gate resistances while temperature is varied by a hot plate connected to power modules. Self-heating is also investigated by measuring the temperature rise of the modules at high switching frequencies (8 kHz). This has resulted...
Series-connected power switch provides a viable solution to implement high voltage and high frequency converters. By using the commercially available 1200V Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) and Metal Oxide semiconductor Filed-effect Transistor (MOSFET), a 6 kV SiC hybrid power switch concept and its application are demonstrated. To solve the parameter deviation issue in...
This paper proposes a novel hybrid PWM-resonant isolated boost converter which has a low filter capacitance requirement owing to the two-stepped current waveform driving the output capacitor. An auxiliary circuit comprising of two switches and a parallel LC network is used to achieve zero-voltage-switching (ZVS) operation of the main MOSFETs. Evolution of the topology and basic circuit operation with...
This papar proposes which the Dual Active Bridge (DAB) converter changes between Full Bridge (FB) converter's operation and Half Bridge (HB) converter's operation on the secondary side of the high frequency transformer depending on the output power. With the HB converter operation's, the iron loss of the transformer becomes small because the secondary voltage of the transformer becomes half compared...
To achieve higher output PWM frequency with limited switching frequency of devices, a topology named parallel frequency-multiplication is employed in this paper, which, however, leads to more serious current spike and oscillation in the turn-on transient because of the parallel of devices. Aiming at this issue, the theoretical analysis of transient process is presented to explain how the current spike...
Car black boxes operate mostly in sleep mode, which requires high efficiency for light load. We propose two schemes to improve light load efficiency of the 3-level buck converter proposed by Reusch. The first scheme is to adopt constant ON-time control with DCM for light load. The second scheme is to shut down the gate drivers for the two bottom MOSFETs allowing Schottky diodes in parallel to conduct...
This paper presents an interleaved totem-pole bridgeless power factor correction (PFC) rectifier which consists of a coupled inductor and two interleaved bridge arms. The core utilization and power density are improved with the use of coupled inductor. However, it also introduces a serious diode reverse-recovery problem and increases the turn-on loss obviously due to the poor parasitic body diode...
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