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We have fabricated high-performance self-aligned top-gate InGaZnO TFTs with novel silicon-like source and drain (S/D) parasitic resistance (RSD) reduction processes. Ar ion implantation (Ar I/I) formed S/D extension layers and reduced RSD by inducing high-density carriers. First demonstration of self-aligned S/D metallization processes on InGaZnO surface (In-Ti alloy formation), just like silicidation,...
This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common source circuit for the baseband amplification. The measured conversion gain is very flat and exceeds 15 dB from 2 to 20 MHz carrier frequency range, which covers a relevant portion of the shortwave...
This paper presents a system consisting of an array of thin-film microphone channels on glass, which can be formed on large substrates. Each microphone channel consists of a polyvinylidene difluoride (PVDF) piezoelectric transducer as well as amplifier and scan circuits based on amorphous-silicon (a-Si) thin-film transistors (TFTs). The scan circuits multiplex signals from multiple channels to a CMOS...
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