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We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf/SiON gate stack of mid-gap work function and precise GIDL control achieved ultra-low leakage of 0.2 pA/µm, which corresponds to approx. 100nA/chip (100k gate logic). Now the SOTB technology can provide three options from ultra-low voltage to ultra-low leakage that covers a wide...
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