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Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.
Enabling a high-density ReRAM product requires: developing a cell that meets a stringent bit error rate, BER, at low program current, integrating the cell without material damage, and providing a high-drive selector at scaled nodes. We discuss ReRAM performance under these constraints and present a 16Gb, 27nm ReRAM capable of 105 cycles with BER < 7×10−5.
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