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In this work, novel layouts of a 4:1 CMOS transmission gate multiplexer are presented. The proposed layouts are realized by following the design rules for 45 nm and 90 nm CMOS processes, with a supply voltage of 1.2 V. Both layouts are designed using two different routing strategies — using only one metal layer, and using two metal layers. The power dissipation and area are noted and compared in all...
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