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In this paper we have proposed a novel Sense Amplifier (SA) design which is capable of predetermining the direction of offset in threshold voltage in the sensing transistors and which provides up to 24% more current differential by activating a path for current to flow in a device, parallel to the weaker transistor, thus compensating the inherent offset. Due to its self correcting capability, the...
The microfabrication technology has had a chequered history of over 50 years in the field of microelectronics. Aggressive miniaturization of microelectronic devices has resulted in faster logic circuits; & and it has also reduced their power requirements. MOSFET device dimensions have already entered the sub-100 nanometer regime. The same successful principles of microfabrication were applied...
Sense amplifiers are one of the important circuits in the CMOS memories as they have a greater impact on the access time and power dissipation of memory cells. The current-mode sense amplifiers have improved the access time as well as power dissipation to a large extent when compared to voltage-mode sense amplifiers, thus resulting in making the memories compatible with the high speed CMOS technologies...
The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered...
This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer...
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