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In this work an ultrafast characterization technique has been developed with the aim of studying the NBTI degradation in pMOS transistors by acquiring the threshold voltage (Vth) shift in very short relaxation times after the electrical stress removal. The NBTI degradation has been studied as a function of the stress and relaxation time. The observed BTI relaxation has been explained in the framework...
MIS capacitors based on Dy2O3-doped ZrO2 oxide dielectrics were studied. The oxide films were grown by ALD. Defect concentrations at the oxide/semiconductor interface and inside the oxide depended on the film annealing that reduced the interface quality and increased defect densities inside the oxide. The leakage current density decreased at moderate voltages when the amount of dysprosium in the films...
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