The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work an ultrafast characterization technique has been developed with the aim of studying the NBTI degradation in pMOS transistors by acquiring the threshold voltage (Vth) shift in very short relaxation times after the electrical stress removal. The NBTI degradation has been studied as a function of the stress and relaxation time. The observed BTI relaxation has been explained in the framework...
This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell figures of merit namely open-circuit voltage, short-circuit current density, fill factor, and conversion efficiency, allowing us to determine an optimum design for these devices. Particularly,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.