The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Blistering of 11 nm and 45 nm-thick Al2O3 layers deposited by ALD on silicon substrates is studied in Al-Al2O3-Si structures fabricated using a field isolated process. Blisters are shown to be unevenly distributed and with different dimensions depending on the structure area. After chemical etching down to silicon, round voids are revealed underneath the blisters depending on the etchant used, indicating...
In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO2-based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.