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Three types of high power GTO's with voltage ratings of 600 to 1300V, and maximum gate turn-off currents of 200 to 600A were developed. Design considerations for realizing these devices will be described. In addition, various results will be demonstrated relating to the development of a VVVF inverter using these devices.
The emitter shunting resistance can be used as an independent input in determining the switching characteristics of thyristors, especially fast switching thyristors. A smaller shunt resistance leads to a higher dv/dt capability and a higher gate triggering current. Trade-off relations given in this paper indicate that the device's dv/dt capability and hence the turn-off time can be optimized by sacrificing...
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