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It is shown that the ratings of rectifiers can be optimized by maximizing the ratio of the high level to the low level lifetime. An optimization criterion relating the recombination center location to its capture cross-section ratio for holes and electrons is derived. In the case of thyristors, the leakage current must also be considered in the optimization. This results in a criterion which relates...
A model of base widening and the associated inverse mode base conductivity modulation is proposed. Expressions are obtained for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles. A convenient method for calculation of optimum transistor design variables is also given.
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