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Three types of high power GTO's with voltage ratings of 600 to 1300V, and maximum gate turn-off currents of 200 to 600A were developed. Design considerations for realizing these devices will be described. In addition, various results will be demonstrated relating to the development of a VVVF inverter using these devices.
A model of base widening and the associated inverse mode base conductivity modulation is proposed. Expressions are obtained for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles. A convenient method for calculation of optimum transistor design variables is also given.
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