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In this work a comparison of the analog performance between vertical silicon Nanowires Tunnel Field Effect Transistors (NW-TFETs) and nanowires MOSFETs (NW-MOSFETs) is performed mainly focusing on the basic analog characteristics at room and high temperatures for the first time. The opposite transconductance trend as a function of temperature and the much lower (better) output conductance obtained...
This work studies the low frequency noise (LFN) behaviour of vertical nanowire Tunnel-FETs (NW-TFETs) with Si or Ge sources, where the latter devices have different HfO2 thicknesses (2nm and 3nm) in the gate stack. The presence of Ge in the source yields an increase in the current noise power spectral density (Sid) at low frequency, while Sid is reduced for the thinner HfO2, due to the reduction of...
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