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Strained Si1−yCy epilayers with up to 1.48% C content have been grown on Si(001) by RP-CVD using the low-cost precursors disilane and trimethylsilane. These epilayers, with higher C content, were found to form point defects throughout growth resulting in amorphous hillocks forming on the epilayer surface. The size and density of these surface defects increases with C content and epilayer thickness...
We investigate the bonding and electrical insulation properties of oxide layers for use in 3D monolithic integration via direct wafer bonding. Low surface roughness layers deposited on 100 mm Si wafers by atomic layer deposition (ALD) at 200 °C–350 °C, provide with adequate layer transfer bonding interfaces. Wafer scale IV measurements were performed to investigate the leakage current. We demonstrate...
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