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Al2O3/InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al2O3/InGaAs interface quality with a low Dit value (∼3×1012 cm−2eV−1), and passivated border traps.
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