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We present measurements and parameter extraction performed on 28nm UTBB FDSOI MOSFETs with two different Back Plane configurations (p-type and n-type BP). The change in BP doping and work function affects directly the back-channel characteristics and indirectly, via interface coupling, the front-channel properties. We investigate the parameters relevant for the design of ESD protection devices: threshold...
The purpose of this study is to evaluate the ESD protection behavior using BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. Using as a reference our measurements in hybrid bulk structures we extend the BIMOS design towards the ultrathin silicon film. Evaluations are done based on 3D TCAD simulation with standard physical models using ACS method...
In this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented.
In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 μm and bond onto a 25-μm-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100°C with an applied pressure of 1.2 bar. The die stack transferred onto the metallic substrate comprises the 200-nm-thick active layer and the 5.5-μm-thick...
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