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The contributions of gate-connected and source-connected field plates to extracted device capacitances (gate-source, gate-drain and drain-source capacitance) are assessed during the development of an AlGaN/GaN-on-SiC HEMT model. The capacitances due to the presence of a gate field plate are observed to be intrinsic in nature, while those associated with a source-connected field plate can be regarded...
A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate...
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