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A large-signal model for 120W high power packaged pre-matched transistor utilizing TriQuint's TQGaN25HV HEMT technology is presented. It is composed of an array of unit-cell nonlinear EEHEMT models representing the high power GaN transistor die and EM based models for the input/output pre-matching circuits relaying the transistor die pads to the package leads. This model offers accurate small-signal...
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design...
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