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We present an experimental study of thermal conduction in 1 µm thick suspended CVD diamond film by time-domain thermoreflectance (TDTR), an optical pump-probe technique. Important aspects of signal analysis and measurement sensitivity are discussed, outlining the various thermal metrology challenges posed by this system. We measure the properties of the near-interfacial coalescence region and high-quality...
The performance of thin-film evaporative cooling for near-junction thermal management was investigated. A liquid delivery system capable of delivering water in small volumes ranging 20∼75 nl at frequencies of up to 600 Hz was established. On one side of the silicon chip, a resistive heating layer of 2 mm × 2 mm was fabricated to emulate the high heat flux hot-spot, and on the other side a superhydrophilic...
Nanoengineered structures have received significant attention due to the application of porous media convection structures. Metal porous structures provide unique combinations of large surface to volume ratio, high conductivity, and mechanical compliance. The integration of metal porous structures can improve the performance of convective heat exchangers for high heat flux thermal management. Copper...
Copper inverse opal films offer an attractive combination of conduction and convection transport properties that yield a low total thermal resistance for microfluidic heat exchanger applications. In this work, we present an integrated synthesis and characterization strategy to fabricate nanoporous copper inverse opal films and to measure the effective thermal conductivity. We synthesize inverse opal...
Recently, high thermally conductive polymers have emerged as low cost and energy efficient alternatives to traditional use of metals in heat transfer applications. Here, we present development of ultra-high molecular weight polyethylene (UHMWPE) thin films with high thermal conductivity. The fabrication platform is based on a sol-gel process followed by mechanical drawing. After gel formation and...
Phase Change Memory (PCM) technology relies on the contrast in electrical resistance between the amorphous and crystalline states of a chalcogenide active material. Electrical PCM devices use Joule heating by short pulses of current to induce phase change, such that the amount of heat injected into the active material and the rate of cooling determine the final state of material formed. In this paper,...
Self-heating effects severely limit the performance of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs). High thermal resistances within micrometers of the transistor junction often dominate the junction temperature rise and fundamentally restrict the device power handling capability. The use of high-thermal-conductivity diamond near the junction can address this thermal...
We present an experimental study of cross-plane thermal conductance in metal-graphene-oxide stacks employing time-domain thermoreflectance (TDTR) measurements on Al/m/graphene/SiO2 structures with monolayer graphene for varying adhesion metals m. Thermal conductance G in the range of 15–60 MWm−2K−1 are found across several metals - a two-to-fourfold decrease over Al/m/SiO2 reference values, charted...
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