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This paper describes a high-speed switching method of MOSFETs applied to a chopper and a half bridge inverter. By using a voltage boost auxiliary circuit fed by the gate drive power supply, the turn-off time of the MOSFET can be effectively reduced, which enables a high-frequency drive and reduction of the switching loss. It was confirmed through experimental tests that the turn-off dv/dt of the MOSFET...
This study presents a new topology for alternative power sources, namely interleaved boost converter with current ripple reduction (IBC-CRR), which discards electrolytic capacitors to enlarge the life-span of the converter by using current ripple reduction (CRR) technique. The voltage spikes on switches are eliminated resulting of using of low on-resistance (RDS(ON)) MOSFETs to improve efficiency...
The advent of Silicon Carbide (SiC) devices has made possible high switching frequency operation of PWM power converters. In this paper, SiC devices are compared in detail with Si devices in a high power (1 MW) DC -DC converter application. The converter is designed as the building block for traction drives which requires it to operate at high power, high input voltage (11 kV) and low output voltage...
In this paper, recent technical trends and future prospects of IGBTs and power MOSFETs is presented. Device technologies mainly for reducing power loss are discussed. This is because the reduction in power loss of these power devices is important for home and consumer appliances. Firstly, historical main road maps of these device technologies are introduced. Next, proposed future road maps and distinguishing...
This paper discusses the applicability of SiC MOSFET to high-frequency induction heating applications. In this paper, a 15-kW, 70-kHz SiC MOSFET inverter prototype is constructed to evaluate the performance of the SiC MOSFETs. Power loss breakdown is also conducted from the experimental results. As a results, the inverter prototype has exhibited a power conversion efficiency as high as 98.5% at the...
This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during reverse recovery at high di/dt. Different bias voltages and dead times are combined, giving a loss map...
A novel bridgeless interleaved boost PFC rectifier is proposed for improving power efficiency and system performance in this paper. By combining the conventional bridgeless topology and the interleaved technology, this rectifier is comprised of two interleaved boost branches without the front-end diode bridge. Each branch operates in every half-line cycle, together with the current following through...
This paper discusses an isolated three-phase AC-DC converter using Modular Multilevel Converter (MMC) topology for a medium voltage application. The MMC at a primary stage of an isolated AC-DC converter directly obtains the high frequency AC voltage from the three-phase AC voltage of the commercial frequency. In addition, the proposed system obtains the low total harmonic distortion (THD) in the input...
This paper deals with a 3kW multilevel inverter used for PV applications. A comparison has been made based on simulations using IGBTs and SiC MOSFETs to see how much efficiency can be gained when SiC diodes are used. A prototype with the same IGBTs and SiC MOSFETs has been built but using regular soft-recovery Si diodes instead of SiC diodes. Efficiencies and switching transitions for different switching...
Super -junction MOSFETs and shielded gate trench MOSFETs are widely used especially for PFC and DC-DC converters for networking and computing power supply systems that require high efficiency and power density. With smaller parasitic capacitances, the latest SJ MOSFETs have extremely fast switching characteristics and therefore reduced switching losses. But, naturally this switching behavior leads...
Silicon Carbide (SiC) has wider band gap compared to Silicon (Si) and hence MOSFET made in SiC has considerably lower drift region resistance, which is a significant resistive component in high-voltage power devices. Due to low on-state resistance combined with its inherently low switching loss, SiC MOSFET is an excellent candidate for high power converter design. With its lower power loss and operation...
The Silicon Carbide (SiC) based devices will become the mainstream in the motor drive technology in the near future. These next generation power devices give benefits of lower losses, higher voltage, and high temperature operation in the power conversion system, realizing its downsizing and high power density. The winding change over technique, on the other hand, is useful to extend the speed control...
New SiC (Silicon Carbide) power semiconductor modules were developed and applied to the power electronics equipments. 25% of loss in the motor drive inverter is reduced by applying hybrid modules which are composed of conventional Silicon IGBTs (Si-IGBT) and SiC Schottky Barrier Diodes (SiC-SBD). In case of a 20kW inverter for solar photovoltaic (PV) generation, 99% of main circuit efficiency and...
Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (Rdiff,on). Moreover, the results reveal that the nano-tech resin, improved resin and...
This paper presents a 1200-V 20-A full silicon carbide boost chopper module designed for high temperature and high frequency operation. The developed module is based on one silicon carbide metal oxide semiconductor field effect transistor chip and two parallel connected silicon carbide schottky diode chips manufactured by Cree, Inc. The static and dynamic characteristics of the module have been experimentally...
Recently, medium voltage SiC devices have been developed which can be used for grid tie applications at medium voltage. Two such devices − 15 kV SiC IGBT and 10 kV SiC MOSFET have opened up the possibility of looking into different converter topologies for medium voltage distribution grid interface. These can be used in medium voltage drives, active filter applications or as the active front end converter...
This paper presents the student's manufacture activity of a racing Electric Vehicle (EV) which is a very small size and single rider type for participate ECO-RUN Race in Sugo Japan. The racing EV requires a light body weight, small wind resistance, high electric energy efficient, etc. to achieve a good score in the ECO-RUN racing tournament in Sugo. Not only power electronics but also mechanical design...
A high-voltage full bridge dc-dc converter has a big problem of high-voltage surge occurrence across secondary-side rectifying diodes. In order to solve this problem, a simple solution with a snubber capacitor has been proposed. This technique provides a prominent effect of surge-voltage suppression. On the other hand, it deteriorates the control characteristics of this converter. In this paper, the...
This paper investigates the performance of Static Synchrounous Compensator (STATCOM) with the new variation of multilevel selective harmonic elimination pulse width modulation (MSHE-PWM). The proposed MSHE-PWM optimizes both the dc-voltage levels and the switching angles, enabling more harmonics to be eliminated without affecting the structure of the inverter circuit. The method also provides constant...
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are...
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