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Oscillators belong to the group of fundamental building blocks and are ubiquitous in modern electronics. Especially spin torque nano oscillators are very attractive as cost effective on-chip integrated microwave oscillators, due to their nano-scale size, frequency tunability, broad temperature operation range, and CMOS technology compatibility. Recently, we proposed a micromagnetic structure capable...
We use a hydrodynamic model self-consistently coupled to a 1D Poisson solver to simulate the excitation by optical beating as well as by electrical perturbation of plasma waves in n+nn+ InGaAs diodes at room temperature. We calculate the electric field response and the velocity response of the carriers in the middle of the diode regions. Our results show clearly the presence of three-dimensional plasma...
In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current. Physically, the effect is caused by the suppression effect of the remote Coulomb interaction which takes place in the gated region of the conducting channel. In the present work we propose a way to overcome this limitation...
In this work we present a theoretical study based on time-domain Monte Carlo (MC) simulations of GaN-based Self-Switching Diodes (SSDs) oriented to the experimental achievement and control of the sub-THz Gunn-oscillations potentially provided by these devices. With this aim, an analysis of the frequency performance of SSDs connected to a resonant RLC parallel circuit, is reported here. V-shaped SSDs...
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