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Multiple, serially-connected nanoscale rings are analyzed using a tight-binding computational algorithm which allows calculation of the transmission and current characteristics of the system as a function of energy and external magnetic flux. Results show the role of bilateral symmetry in the system response to imposed flux, which can shift the system from metallic to semiconducting.
Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced...
Memcomputing is an emergent computing paradigm that employs two-terminal electronic devices with memory, namely, memristive, memcapacitive or meminductive systems, to store and process information at the same physical location. Complex networks of such devices can be considered as massively-parallel processors performing computation in an unconventional way. In this contribution, we discuss essential...
The effect of exchange interaction on the scattering probabilities of two electrons injected simultaneously from different sources into a tunneling barrier is analyzed using time-dependent antisymmetric wave functions. Quantum noise for two electrons is calculated using this algorithm showing excellent agreement with Bu¨ttiker results for typical scenarios, while new results are obtained for more...
Empirical pseudopotentials are employed to study ballistic electron transport in nanoscale open systems. The boundary conditions are treated using the complex band structure and Schrödinger equation is solved self-consistently with Poisson equation employing parallel computing technique and a sparse-matrix solver. The example of a Si NanoWire is considered.
In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-AU-Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail...
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