The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Measuring a quantum system implies some kind of perturbation of the system itself. A novel approach to include the perturbation of the quantum electron device, i.e. the back-action, due to the TeraHertz (THz) measurement of the total current is presented. The approach is based on a microscopic description of the interaction between the quantum system and the measuring apparatus, in terms of conditional...
This paper gives a short overview on our recent investigations towards a multiscale modeling and simulation framework for metal-CNT interfaces. We employ three simulation approaches with well defined interfaces. For the simulation at device level we make use of a recently developed wave-function based effective-mass Schro¨dinger-Poisson solver which employs a hetero-junction like contact model to...
In this work we present a theoretical study of the effect of random alloy fluctuations in a InGaN inclusion embedded in a GaN nanowire (NW) LED on the electronic and optoelectronic properties. The calculations are based on an empirical tight-binding (ETB) model, while strain is calculated with a valence force field (VFF) method. Energy gaps distributions are obtained and an optical spectral broadening...
We compare the performance prospects of three recently proposed and demonstrated transistors based on vertical and lateral graphene-based heterostructures, with the requirements of the International Technology Roadmap for Semiconductors. All devices provide large Ion/Ioff ratios, but only the lateral heterostructure field-effect transistors exhibit promising dynamic figures of merit, i.e. delay time...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.