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In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle...
Multiple, serially-connected nanoscale rings are analyzed using a tight-binding computational algorithm which allows calculation of the transmission and current characteristics of the system as a function of energy and external magnetic flux. Results show the role of bilateral symmetry in the system response to imposed flux, which can shift the system from metallic to semiconducting.
The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.
A defective double stranded poly(dG)-poly(dC) DNA molecule under axial mechanical strain is analyzed using a tight-binding computational model which allows calculation of the transmission and current characteristics of the system as a function of electron energy. Results show the existence of highly sensitive electron transmission behavior with respect to the on-site energy perturbations.
We show that the normal-superfluid transition in bilayer graphene (BLG) predicted to occur at high temperature is strongly affected not only by the dielectric constants of the insulators, but also by the proximity of ideal metal gates. Even assuming optimistically an unscreened interlayer Coulomb interaction, we find that for a gate-insulator thickness smaller than 2-to-5 nm of equivalent SiO2 thickness,...
The calculation of electron-phonon interaction from first principles has recently become feasible using density-functional perturbation theory (Quantum Espresso) [1] and the small displacement method (GPAW) [2]. We determine the strength of the electron-phonon interaction using the Vienna Ab-Initio Simulation Program (VASP) [3] with the small displacement method using PHONOPY [4]. We illustrate our...
In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used...
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