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Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), influence the both device design and device and circuit performance. In this work, we have studied the impact of a shape of the device body on the characteristics of a 10.7 nm gate length...
A 3D Finite Element Monte Carlo simulation with 2D Schro¨dinger based quantum correction are employed to forecast the performance of SOI Si FinFET devices scaled to gate length of 10.7 nm. The performance of these devices are greatly affected by the exact device geometry and thus the accurate description of cross-sections is essential. We chose three cross-sections: rectangular (REC), wide- (WTRI)...
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