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Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced...
Electron transport properties of GaN-based heterostructures are investigated by means of a Monte Carlo model, which considers a large number of subbands in several valleys. Room-temperature low-field mobility consistent with experimental results is obtained provided that screening of phonon scattering is accounted for. In intrinsic heterostructures the mobility is always greater than in bulk GaN....
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