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A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The...
This paper presents an X/Ku-band bi-directional true time delay T/R chipset in 0.13 µm CMOS technology for wideband phased array antenna. The T/R chipset comprises of wideband bi-directional distributed gain amplifiers (BDGA), a 7-bit true time delay (TTD) circuit, and a 6-bit digital step attenuator. The tuning bits are included in TTD (2-bit) and DSA (2-bit) for the amplitude and group delay error...
In practical implementations, class-F amplification is achieved based upon the second and/or third harmonic control provided by the output matching network. This paper presents a design method based upon inserting finite-frequency transmission zeros to a lumped-element matching network at the harmonic frequencies of interest. A two-section impedance matching network is transformed to either a class-F...
To combine large number of CMOS power transistors within compact area, a 2D distributed in-phase power combiner is proposed with use of metamaterial-based zero-phase-shifter. One 54 to 62.8GHz PA has been demonstrated in 65nm CMOS with a 4×4 distributed power combining of 16 transistors in compact area of 0.48mm2. Measured results show 16.6dBm output power (OP1dB), 11.3% peak PAE, 95.2mW/mm2 output...
The last seven years, Cinvestav-GDL and CICESE, two of the most important research centers in Mexico, have been working together in several microwave research topics. This paper describes the relationship of these two academic institutions regarding to the research activities in this field. A brief history and the research interests of these institutions are presented, highlighting some of the benefits...
An inverter-based digital switch-mode driver circuit, highly-integrated with a GaN power transistor is presented. The layout is fully scalable in output power and therefore suitable for amplifiers with power levels of higher than 10 W. The circuit enables a switch-mode operation from DC to 3 GHz. A consistent analysis of digital switching measurements and active harmonic load-pull results is performed...
Solid-state power amplifiers need protection against reflected power at the output caused by load mismatch. The standard method for protection is to include a ferrite-based isolator at the output. The isolator will redirect all reflected power to a dissipating load resistor and will ensure that the output of the amplifier always sees a 50 Ω load. Disadvantage of such isolator is the large size, weight...
The concept and design of terahertz (THz) digital phase shifter based on graphene Gate-controlled Switchable Devices (GSD) with Defected Ground Structures (DGS). It is shown that the graphene based Unit Phase Shifter (UPS) may enable viable applications of gate controlled switchable devices for THz wideband antenna systems with considerable advantages while integrating with external circuits. Since...
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