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Two broadband VHF MMIC power amplifiers using GaN HEMT transistors are described in this paper. The first circuit exhibits a PAE ranging from 85% to 51% in the 15MHz – 500MHz bandwidth. The second circuit is a self-biased design and demonstrates a peak PAE of 75% at 100MHz for 13.5W output power in a similar bandwidth. The self biased topology enables a higher bias voltage and therefore higher output...
This paper presents a fully integrated triple-band CMOS hybrid-EER transmitter for WCDMA/LTE applications. The operation frequency bands are 0.8/2.3 GHz for LTE and 1.9 GHz for WCDMA applications with multi-band class-E power amplifier (PA) using a power cell resizing technique and a multitap transformer. The multi-mode envelope amplifier support 3.84-MHz WCDMA and 5-MHz LTE signal with a dual-switching...
A six port mixer based 20GHz nonlinear vector network analyzer (NVNA) dedicated to the characterization of radar power amplifier driven by non periodic pulsed signal is proposed. For the first time a mixer based NVNA is able to measure the fundamental and two harmonics simultaneously while using non periodic radar pulse train allowing measuring time domain waveforms and pulse to pulse measurement...
In this paper, a 220–235 GHz single-stage power amplifier (PA) MMIC is presented. The amplifier uses 250 nm InP hetero-junction bipolar transistors (HBTs) and benzocyclobutene (BCB) thin-film microstrip technology. Two levels of power combining were used on-chip to achieve total emitter area of 12 μm2. The first level is a two emitter finger HBT with each finger having emitter area of 0.25×6 μm2....
A millimeter-wave power amplifier (PA) implemented in a commercial 45nm CMOS SOI technology is presented. The PA design is based on stacking of two dynamically-biased Cascode transistor cells where drain-source voltages of individual transistors are added constructively to increase the output power. The PA output impedance is the sum of the output impedances of the two Cascode cells and is optimized...
This paper presents the design, implementation, and experimental evaluation of a high efficiency continuous Class BJ mode power amplifier, using a compact defected ground structure (DGS) to provide the necessary output matching and harmonic termination for broadband operation. Detailed consideration has been given to the DGS microstrip line impedance and corresponding equalization network, in order...
Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new “post-distortion” method for power...
The carrier power amplifier (PA) of a Doherty architecture is designed with a load that maximizes efficiency for a particular load-pull ratio. With the increase of the input drive, the peaking PA provides the necessary current to reduce the carrier PA load impedance. From this point on, the carrier PA operates at a constant output voltage, suffering a severe voltage gain compression at its terminals...
A high power internally matched GaN-HEMT amplifier at Ku-Band was successfully developed. In order to achieve high output power over the targeted bandwidth, a new balancing network is added to the gate side matching circuit. At 24 V drain supply voltage, the HPA delivers 80W of CW RF power with a PAE exceeding 22% over the 13.75–14.5 GHz frequency range. To the best of authors' knowledge, this output...
Digital predistortion (DPD) is one of the most effective techniques to mitigate the power amplifier (PA) nonlinear distortion. The DPD feedback bandwidth is often restricted by the nonideal electronic components, e.g., the anti-aliasing filter, which introduces bandwidth mismatch between model basis function and feedback signal thus degrades the linearization performance. This paper presents a new...
This paper reports a new family of GaAs MMICs for E-band communications applications. Both single-ended and balanced versions are reported with minimum output power levels of 26 dBm and 28 dBm respectively for both the 71–76 GHz and the 81–86 GHz. bands. This is 3 dB (2 times) higher than the current state-of-the-art. The single-ended version of the low-band (71–76 GHz) MMIC demonstrated an output...
This paper presents measurement results on supply-modulated X-band 0.15µm gate width GaN HEMT MMIC power amplifiers for OFDM signals. Two PAs at 10GHz with 4 and 10W output powers show peak CW efficiencies of 69% and 55%, with gains of 8.5 and 20.4 dB respectively. Supply modulation trajectories are designed by static characterization of each MMIC PA, and the drain modulation is performed though both...
We report a two-stage W-band power amplifier (PA) using novel 4∶1 series power-combining with sub-quarter-wavelength baluns. The power amplifier, fabricated in a 0.25 µm InP HBT technology, produces 470 mW (26.7 dBm) output power at 81 GHz, 23.4 % peak PAE, and >11.5 GHz 3-dB bandwidth. The compact series power-combining networks permit a small 1.06 mm2 die area and a high 443 mW/mm2 output power...
A new load-insensitive class-E power amplifier mode is presented that that enables frequency reconfigurability by statically changing the switch duty-cycle without compromising its tuned efficiency performance. The technique is tested on a prototype CMOS-GaN class-E Chireix power amplifier designed for 1.8–2.2 GHz. The drain efficiency is more than 55% at 8dB back-off and more than 60% at 6dB back-off...
This paper presents the design and the measured results of two GaN power amplifiers designed to operate from 30 MHz to 2.7 GHz. One design is a fully integrated non-uniform distributed power amplifier (NDPA) MMIC. NDPA achieves typical small signal gain of 20 dB and produces 10W of output power with 50% or better PAE across the frequency band. The other design is a hybrid discrete packaged amplifier...
This paper proposes an iterative calibration technique to enhance the linearity for multilevel LINC transmitters. With this approach, the precision of characterising AM/AM and AM/PM behaviours for discrete levels can be improved, which results in better adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) performance. An ML-LINC transmitter is built with two PAs in GaN technology,...
High frequency power devices require specific loading conditions to provide maximum output power, operate efficiently and avoid self-destruction. In applications with unknown or time varying loading conditions it is therefore desirable to monitor, in-situ, the loading conditions offered to the PA. This work proposes an ultra-compact six-port package-integratable reflectometer. The resulting structure...
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