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A dc-80 GHz compact distributed amplifier (DA) with 15-dB small signal gain is developed in 40-nm CMOS digital process. The circuit architecture is based on the conventional DA (CDA) with gain cell of cascaded single-stage DA (CSSDA). In order to minimize the chip size, the artificial transmission-line sections of DA are implemented with microstrip-line instead of coplanar-waveguide (CPW), and the...
A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.
Presented herein is the first ever hardware based methodology for collision avoidance of multiple, frequency doubling transceivers. Frequency doubling transceivers have many advantages over other passive RFID systems, including their simplicity, size, and read range. The drawback of frequency doubling transceivers is the lack of a method for uniquely identifying a single tag when multiple tags are...
Aperture tuned antennas are becoming more common in Smart Phone Handsets to address radiated efficiency issues caused by industrial design constraints and increased frequency requirements. This paper focuses on a real application example of a MEMS Digital Variable Capacitor (DVC) from Cavendish Kinetics in antenna aperture tuning. The OTA performance is bench-marked against using state-of-the-art...
A frequency-tunable lens-coupled annular-slot antenna using a Schottky varactor diode has been developed and characterized at 140–220 GHz. A tuning range of ∼50 GHz (agree with simulation) has been demonstrated by varying the diode's DC bias. Antenna far-field patterns have been measured at 203 GHz, showing that the diode has only a minor effect on the antenna's radiation properties. This type of...
Novel phase shifters were designed by using only two MEMS switches to control a metamaterial-based slow-wave structure in each unit cell. A unit cell with an area smaller than 1 mm2 exhibited a phase shift of 54±15°, an insertion loss of less than 0.9 dB, and a return loss of higher than 15 dB between 12 GHz and 18GHz. Modeling not only agrees with the measured data, but also points out possibilities...
A 135–160 GHz active doubler has been developed in 45 nm CMOS SOI. Careful optimization is done on the transistor size, layout and transmission-lines in order to result in the best performance. The doubler shows a measured peak power of +3.5 dBm at 150 GHz and > 2 dBm at 140–160 GHz, at a bias voltage of 1 V. These were achieved at an input power of 7–8 dBm at 70–80 GHz, resulting in a conversion...
An improved large-signal model for intrinsically tunable and switchable ferroelectric FBARs is presented. Ferroelectric FBARs based on multifunctional materials such as BST possess electric-field-tunable permittivity and electric-field-induced piezoelectricity. These properties are promising for the design of a new class of high-power reconfigurable RF devices for frequency-agile radios. Availability...
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