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In this paper, a 220–235 GHz single-stage power amplifier (PA) MMIC is presented. The amplifier uses 250 nm InP hetero-junction bipolar transistors (HBTs) and benzocyclobutene (BCB) thin-film microstrip technology. Two levels of power combining were used on-chip to achieve total emitter area of 12 μm2. The first level is a two emitter finger HBT with each finger having emitter area of 0.25×6 μm2....
This paper presents the design, implementation, and experimental evaluation of a high efficiency continuous Class BJ mode power amplifier, using a compact defected ground structure (DGS) to provide the necessary output matching and harmonic termination for broadband operation. Detailed consideration has been given to the DGS microstrip line impedance and corresponding equalization network, in order...
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