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We fabricate Silicon nanowire (SiNW) arrays for solar-cell applications on 6-inch wafers employing metal-assisted chemical etching (MacEtch). It can reduce cost and energy consumption. However it is difficult to make uniform SiNW arrays on large size wafer. Here we demonstrate a simple method to achieve a uniform SiNW on 6 inch wafers. Moreover, optical properties and surface morphologies of 6 inch...
MWCNT arrays fabricated by microwave plasma chemical vapor deposition on Si substrate with interdigital electrodes (IDE) were integrated into a resistive sensor design. A scanning electron microscope was used for the characterizations of MWCNTs. The gas response of MWCNT arrays to NH3 and NO2 gas were investigated at room temperature, respectively. The results exhibited that the thickness of MWCNT...
Drag reduction of liquid flows on solid/liquid interface has become an important issue with the development of microfluidics systems. Theoretical and experimental studies have shown that at the solid-liquid interface the presence of nanobubbles is believed to be responsible for boundary slip, and the size, quantity and distribution of nanobubbles on hydrophobic surface will influence the slip length...
In the study, ZnO nanowires were synthesized by chemical bath deposition (CBD). We have synthesized the ZnO nanowires with various growth time and use the ZnO films as the photoelectrodes of DSSCs. In our experiment, the seeded solution was prepared by zinc acetate and NaOH. And the precursor of CBD method solution was made by zinc nitrate and HMTA for ZnO nanowires growing. We demonstrated the fabrications...
Electrochemical deposition of gold nanoparticles (Au NPs) on the gold multi-electrode array (MEA) fabricated with bi-layer lift-off resist sputter-deposition technique was performed. Electrochemical deposition was performed by potentiostatic and cyclic voltammetry method. The surface of Au NP-modified electrode showed various morphologies with applied voltage and the concentration of HAuCl4 solution...
High oriented (002) gallium nitride (GaN) thin film is manufactured on 2inch c-plane oriented sapphire by pulsed laser deposition (PLD). The target we used was polycrystalline GaN target. During the growth of GaN, nitrogen gas was purged and the pressure is controlled at 10 mtorr while the temperature and energy are optimized. The surface roughness is measured by atomic force microscopy (AFM) while...
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