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We present experimental und numerical investigations on the excitation, optimization and propagation of terahertz surface waves on silicon substrates. A single metamaterial layer is used to enhance the spatial confinement of the surface wave at the interface between air and silicon. The electric terahertz field of the surface wave is measured by a 2D near field scan.
Pulsed broadband terahertz emission can be observed from lateral diffusion currents near the surface of a partially metallic masked semiconductor after ultrafast photoexcitation. We present a theoretical mechanism for the emission based on diffusion and dipole suppression under the metal mask with supporting experimental and theoretical evidence.
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