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Plasma generated in discharged noble gases has been successfully used for terahertz (THz) wave detection. We theoretically analysed the detection mechanism, and found the electrons in the weakly ionized plasma can obtain energy from the incident THz radiation and convert excitation collisions of electrons with excited neutral atoms into ionization collisions, so the ionization current increases. An...
A modeling concept for accurate prediction of 1/f-noise in millimeter wave Schottky detectors is presented. The concept is based on DC bias current measurements with precise knowledge of the diode structure. Key aspect is the distinction between DC and RF current distribution at the Schottky contact, specifically investigated on a quasi vertical diode structure.
We present ultra-wideband zero-bias Schottky diode detector modules with monolithically integrated log-spiral antenna. Detectors exhibit a broad-band response with a stronger roll-off above 800 GHz and the minimum noise-equivalent power of 10 pW/√Hz. The intrinsic diode response time to a short THz radiation has been measured to be less than 25ps.
This paper compares three different procedures for characterising the Noise Temperature and Conversion Loss of a millimetre wave mixer. To carry out this study a 183 GHz sub-harmonic mixer has been measured using three alternative procedures, i.e. the “Attenuator”, the “Gain” and the “Noise injection” procedures. Furthermore for every measurement procedure three different detection methods have been...
This paper presents a method for estimation of junction temperature of a Schottky diode used in a recently developed frequency doubler to 332 GHz. Our particular interest was the validation of the thermal model of the diode by comparison of the simulated junction temperature with the real junction temperature under operating conditions. RF operating condition is here artificially simulated by dissipating...
The development of a 220GHz frequency doubler based on GaAs plannar Schottky diodes is described in this paper. The doubler works at room temperature, and its structure is very simple. A plannar Schottky varactor flip chip which has four anodes arranged in anti-series is mounted onto a quartz based microstrip circuit to realize frequency multiplication. DC bias is put on the varactor through a low-pass...
We characterize InGaAs Schottky barrier diodes (SBDs) with a variation in the anode size. High-efficiency terahertz (THz) pulse detection of the InGaAs SBDs is performed in the cases of anode diameters of 2 µm and 3 µm. The uniformity of the fabricated 1 × 20 InGaAs SBD array is measured to be fine. The THz imaging results using the 1 × 20 InGaAs SBD array are presented.
A broadband detector for electrical field measurements is presented in this paper, deploying an attenuated dipole resonance. High sensitive zero-bias Schottky diodes with anode diameters of 1.5µm allow electrical field characterization down to 1.6 V/m at millimeter wave frequencies. The covered frequency range from 1 to 100 GHz shows a potential voltage response flatness of ±1 dB.
This work presents a physics-based numerical electro-thermal model for Schottky diodes capable of evaluating the thermal effects on the electrical performance of devices and circuits. This model is able to calculate internal temperature distributions and identify regions where heat is generated, providing useful information for device design and circuit reliability.
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