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Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V−1s−1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s.
We demonstrate that various features of a complex GaAs/AlGaAs heterostructure superlattice can be resolved using coherent acoustic phonon spectroscopy (CAP) and that CAP is a viable non-destructive metrological tool in the study of stratified media.
The results of investigation of electronic transport in GaAs nanowires are presented. The time-resolved dynamics of photocarriers were studied by optical-pump terahertz generation-probe time-domain spectroscopy.
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