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We propose a semi-phenomenological model to calculate the material gain of multiple quantum well broadband Semiconductor Optical Amplifier (SOA). We show that this proposed model permits to fit well the experimental results of a broadband SOA gain and noise figure over a range of 100nm.
The slow light effect in semiconductor optical amplifiers has many potential applications in microwave photonics such as phase shifting and filtering. Models are needed to predict the slow light effect in SOAs and its dependence on the bias current, wavelength, power and modulation index. In this paper we predict the slow light characteristics of a tensile-strained SOA by using a detailed time-domain...
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