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This paper will focus on one of the most difficult operation modes of automotive MOSFETs, the operation in avalanche in particular repetitive avalanche. Whereas single pulse avalanche conditions are typically very well defined and tested, repetitive avalanche operation is always an area of discussion as the number of influencing parameters is considerably higher. In automotive applications a vast...
This paper represents the prototype inverter, which is designed for 48 V belt-drive unit with enhanced hybrid functionalities. A pure electric drive mode for low speed range is possible in addition to the classical hybrid operation modes like internal combustion engine start, recuperation and boosting. Electric machine and inverter are combined in a compact drive unit where the inverter is axially...
This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power MOSFET devices. Also, the behavior of the body...
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover,...
With the commercial availability of SiC BJT and MOSFET, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. The objective of this paper is to assess the performance of bidirectional SiC switch devices within matrix converter. Two 2-phase to 1-phase matrix converters will be constructed...
Recent studies have pointed out the benefits of using Silicon Carbide (SiC) devices in photo-voltaic power conversion. In Particular, SiC Power MOSFET technology has greatly advanced over the last years and has presently reached sufficient maturity to stimulate a concrete interest in the development of power conversion circuits based entirely on this technology, in view of the clear potential advantages...
This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical...
This paper presents an experimental parametric study of parasitic inductance influence on SiC MOSFET switching waveforms in matrix converter. The two most critical parasitic inductances have been studied and compared in terms of their effect on waveform ringing, switching loss and device stress. Knowledge about the effects of parasitic inductances on the switching behavior serves as an important basis...
This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry's well-known manufacturers; namely Cree, GE, ROHM, Fairchild, GeneSiC, Infineon, and SemiSouth, are evaluated in this study. To carry out this work,...
While the semiconductor industry struggles with the inherent trade-offs of solid-state devices, serialization of power switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), has been proven to be an advantageous alternative to acquire a high-efficient, high-voltage, fast-switching device. More than twenty years of research, on...
Increasing the bus voltage in high power applications has reached a limit, amongst others by susceptibility to single event burnout induced by cosmic radiation. Single event burnout has a strong correlation to the voltage stress over the switching device. This paper proposes a soft switching multilevel converter to raise the power limit and reduce the susceptibility to cosmic radiation by combining...
Normally-off three-terminal SiC VJFETs having excellent low switching loss, high temperature and high voltage rating are commercially available. This paper compares the switching and EMI performance of SiC Power JFETs to a standard MOSFET on a 75 W high voltage flyback converter and highlights suitable design strategies needed for using a SiC Power JFET.
This paper investigates the frequency domain prediction of conducted EMI within power converters supplied by front-end three-phase diode-bridge. Noise source, noise propagation path and noise receiver are identified. Difficulty due to the presence of diode-bridge is analyzed and a method is proposed and verified by measurement to take the variation of propagation path into account while still enable...
Paper deals with the construction of the electric-kart as a student project. The project was solved by two master thesis and a few semester thesis. The power of this kart is equal to the kart for rent equipped with the combustion engine. The chassis is equipped with Li-ion batteries and DC-motor.
Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs...
A constant on-time PWM control with input feed-forward results in ultra-fast transient response while maintaining relatively constant switching frequency over the entire input voltage range. However, in practical design case, the operating frequency is changed by various load conditions. In this paper, variation of the switching frequency in a constant on-time Buck converter was analyzed in details...
An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are...
This paper describes a novel way to implement soft switching in DC/DC converters for high current low voltage applications in the automotive field. Adding resonant elements to a bidirectional buck boost converter enables resonant behaviour. In simulation and laboratory it will be shown that this behaviour reduces the switch-off losses strongly.
The emergence of silicon carbide MOSFETs and Schottky Barrier Diodes (SBD) at higher voltage and current ratings is opening up new possibilities in the design of energy dense power converters. One of the main advantages of these wide bandgap unipolar devices is the use of fast switching to enable the size reduction of passive components. However, packaging constraints like parasitic inductances limit...
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