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The aim of this paper is to present mathematical model which can be used to predict influence of ceramic coolers geometry on their cooling abilities. The model was derived using Design of the Experiment methodology.
Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
In this paper we present a compact model for AlxGa1−xN/GaN High Electron Mobility Transistors (HEMTs) developed for circuit simulation of power transistors. A physical approach is followed and drain current and intrinsic node charges are calculated using the surface-potential formalism. The HSP model (acronym for HEMT Surface-Potential model) presented here includes: dependence on the aluminum content...
In this paper an approach to analysis of responsivity of MOSFET-based detectors of THz radiation has been presented. The author has analyzed the substrate modes that affect performance of antennas that are always used as a part of detecting structures, and should be accounted for by proper choice of the substrate geometry. Then, a methodology to combine extracted properties of an arbitrary antenna...
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