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We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.
We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4µm wavelengths for single photon counting applications. Packaged devices showed very low variation at −40oC, with ∼100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
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