The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A diode pumped CW Erbium (Er)-doped Zr-Ba-La-Al-Na (ZBLAN) fluoride glass fiber laser operating at 2.78 µm was demonstrated using a guided mode resonance filter (GMRF) as an external cavity mirror.
The noise characteristics of an injection-locked VCSEL are experimentally investigated. Effects of injection-ratio and detuning on the phase noise added by an injection-locked VCSEL are studied.
A low-power CMOS-driven VCSEL-based link using a 2-tap feed-forward equalizer in the transmitter is reported at 850-nm wavelengths. Power efficiencies of 1.5, 2.0, and 3.8 pJ/b are achieved at 22.5, 25, and 28.5 Gb/s, respectively.
We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High-speed 25 Gbps operation is also demonstrated.
We report the first experimental observation of periodic oscillations in an optically spin-injected GaInNAs/GaAs 1300 nm VCSEL under CW pumping and operated at room temperature. We show that the stability of the VCSEL can be controlled with the pump ellipticity. 11 GHz periodic oscillations were observed with the device subject to circularly-polarized (left or right) optical pumping. The highest RF...
The creation of silicon based light sources has been a major research and development effort world-wide. Among various approaches to silicon based light sources reported thus far, the hybrid gain-medium approach (especially integrated with group III–V materials) seems to be the most promising one due to its higher efficiencies than any others. [1]
The growth of antimonide vertical external cavity surface emitting lasers (VECSELs) for 1.8 to 2.8 µm emission wavelength is typically based on InGaAsSb/AlGaAsSb quantum wells on GaSb/AlAsSb DBRs which are in turn grown on GaSb substrates. Thus the entire structure is lattice matched to GaSb's lattice constant of 6.09 Å. The growth of such VECSELs on GaAs/AlGaAs DBRs could be of significant advantage...
In this paper, we show recent results in the use of injection locked vertical cavity semiconductor lasers (VCSELs) as novel modulators and narrowband optical filters that can be exploited for applications relevant to microwave photonics. Specifically, we exploit the phase modulation that is imparted onto the injection locked signal by modulating the current to the VCSEL. Optical filtering is realized...
We report a novel approach based upon Vertical Cavity Surface Emitting Lasers (VCSELs) to reproduce a wide range of dynamics observed in biological neurons on a much faster time scale.
Electronically steerable laser sources have applications in areas such as optical display, free space communications, and illumination. Among the multiple figures of merit for beam steering, speed is still a limiting factor for many applications including laser radar [1]. While mechanical methods clearly have inertial limitations, even the fastest available liquid crystal optical phased array techniques...
We demonstrate on-chip beam steering based on a slow-light Bragg reflector waveguide laterally integrated with VCSEL. Electro-thermal tuning of the slow-light waveguide enables continuous beam steering over 9° with a diffraction-limited divergence angle of 2.2°.
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
We describe a dual-frequency dual-polarization class-A vertical external-cavity semiconductor laser delivering a tunable optically-carried microwave signal with an additive phase noise below −120 dBc/Hz at 10 kHz.
Vertical cavity surface emitting lasers (VCSELs) are important light sources for communication and sensing applications. The materials used for fabricating VCSEL emitting at 650–1000 nm are typically limited to GaAs-based compounds. Increasingly III–V semiconductor photonic devices have been bonded to Si [1] and other substrates [2]. To extend the applications of VCSELs, we demonstrate a bonding approach...
We demonstrate ultra-compact intra-cavity contacts fabricated with an embedded Al2O3 etch-stop, which effectively shorten the cavity length and enhance the output power of a multi-terminal VCSEL.
1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems.
We are presenting an overview of InP and GaSb based VCSEL devices in the long-wavelength range. Device structures and performances regarding high-power, tunability and high-speed are discussed by focusing on telecommunication, safety and medical applications.
We report a directly modulated 850nm VCSEL-based Optical link operating at 55Gb/s. This is the highest modulation rate for VCSEL-based link of any wavelength.
CMOS-compatible III–V/Si vertical-cavity surface-emitting lasers (VCSELs) based on a double set of photonic crystal reflectors are demonstrated, showing single-mode continuous-wave operation at 1.55-µm with thresholds in the sub-mW range.
Single mode photonic crystal vertical cavity surface emitting lasers with a modulation bandwidth exceeding 13 GHz are achieved at current density as low as 3.7 kA/cm2 by separating the current and lasing apertures.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.