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Silicon nano-patterned membrane reflectors - Si-MR (2-dimensional photonic-crystal slabs) hold many promising applications in photonic integrated circuits and can be used as ultra-compact mirrors [1] with controlled spectral response [2]. Built entirely from dielectric materials, such membrane reflectors can have very low losses and therefore can deliver near-100% reflectivity both in narrow and wide-band...
The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm−1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
The growth of antimonide vertical external cavity surface emitting lasers (VECSELs) for 1.8 to 2.8 µm emission wavelength is typically based on InGaAsSb/AlGaAsSb quantum wells on GaSb/AlAsSb DBRs which are in turn grown on GaSb substrates. Thus the entire structure is lattice matched to GaSb's lattice constant of 6.09 Å. The growth of such VECSELs on GaAs/AlGaAs DBRs could be of significant advantage...
We designed and analyzed “Mesh-Stack” three-dimensional photonic crystals of 14% bandgap fully compatible with fabrication methods based on alignment and stacking large-area single-crystal membranes containing engineered defects. A single-mode waveguide and misalignment effects are presented.
We will provide a brief overview of our work on optical control of light beams in photonic lattices and of particles with nonconventional optical beams, including trapping and manipulation with propelling beams, bottle beams, and self-accelerating Airy beams
We find electromagnetic waves can be guided at the edge of a three-dimensional photonic crystal in air. A cell-counting approach describes its periodic evolution with interesting interplays among edge, surface and bulk states.
As the current handling - bandwidth product of a single photodiode comprised of lattice matched In0.53Ga0.47As / InP material reaches a practical limit, we explore new lattice mismatched material system of In0.72Ga0.28As / InAsP / InP as a path-forward technology to increase this key parameter.
Integration of active III/V devices on Silicon substrates would tremendously increase the functionality of this semiconductor material. In order to realize true monolithic integration, a defect-free nucleation layer is of outmost importance. As CMOS industry nowadays focuses on exactly oriented (001) Si substrates, the integration of a III/V semiconductor based device structure, employing either lattice...
We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4µm wavelengths for single photon counting applications. Packaged devices showed very low variation at −40oC, with ∼100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
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