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Semiconductors with a high optical nonlinearity, e.g., silicon, which can be lithographically patterned into nanophotonic waveguides or micro-resonators, may lead to on-chip room-temperature telecommunications-band quantum light sources for complex and scalable systems.
The transmission amplitudes of SNAP (Surface Nanoscale Axial Photonics) devices are determined and applied to investigation of basic SNAP structures The developed theory and, in particular, the transmission amplitudes determined in this paper are critical for the design of new SNAP devices and can be directly used in the analysis of the performance of fabricated devices.
We experimentally demonstrated a highly compact 1-to-2 multimode interference splitter to achieve polarization insensitive ultra-low loss behavior. The excess loss is 0.112 dB and 0.184 dB for TE and TM mode, respectively.
A novel polarization splitting is proposed through plasmonic-dielectric coupling with ultrashort coupling length. Extinction ratios of 20.8 dB and 17.0 dB for TE and TM polarizations are achieved at a coupling length of 4.13 µm.
A waveguide coupled Ge PIN photodiode showing 0.7A/W responsivity and 13GHz optical bandwidth at a low dark current of 12mA/cm2 is presented. Its unique features facilitate integration in a high-performance, photonic BiCMOS process.
A new design of vertical waveguide is investigated for on-demand three-dimensional light guiding in three-dimensional photonic crystals. Optical characterization successfully demonstrates that the wide-band vertical guiding is realized in a fabricated photonic crystal.
Single photon sources based on a self-assembled quantum dot in nanophotonic waveguides, gratings, and cavities are interfaced with nonlinear media and electro-optic modulators to demonstrate quantum frequency conversion and amplitude modulation of single photon states.
High-end computing systems are expected to scale from petascale to exascale over the next decade. We describe requirements and architectures for high-bandwidth interconnects based on integrated photonic components that could enable this performance growth.
This paper describes an InP foundry for receiver-type photonic-integrated circuits. A low-contrast-, a medium-contrast-, and a high-contrast waveguide is offered to interconnect the various devices. A multi-project wafer has been fabricated containing 7 different designs.
We present a compact silicon microring modulator with record modulation speed. A novel zigzag PN junction is designed for high efficiency and high bandwidth. 44 Gbit/s NRZ modulation is demonstrated with 3 dB extinction ratio.
Ultra-Fast Uni-Traveling Carrier Photodiodes (UTC-PDs) suitable for active-passive monolithic integration with various Multiple Quantum Well (MQW)-based devices have been designed, fabricated and characterized. The devices achieved a 3-dB bandwidth of up to 170 GHz.
We have developed high-density hybrid integrated light sources for a photonics-electronics convergence system. We proposed and demonstrated a hybrid integration scheme of high-density multichannel laser-diode (LD) chips on a silicon photonics platform with a novel spot size converter.
III–V semiconductor photonic crystal nanolasers are heterogeneously integrated on a SOI waveguides circuitry. We demonstrate this approach constitutes an efficient way to interface these ultimate lasers. Coupling efficiency and optical bistability will be discussed.
We present various classes of monolithically-integrated nanoplasmonic devices and circuits on a complementary metal-oxide-semiconductor (CMOS) platform for electronic-plasmonic hybrid integration. Through this investigation, we demonstrate ultrafast switching, modulation and routing of such devices.
We design integrated holographic filters with any transfer function by weakly modulating the top cladding of SOI waveguides. Our calculations are confirmed by full-vectorial simulations. Grating are fabricated with focused ion beam.
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