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Self-structured CNT networks were grown on n-Si substrates using a recently developed CVD process based on a reactor with high and low temperature zones. This CVD process separates the synthesis of CNTs at typically 800°C from their deposition at temperatures below 150°C on cheap substrates like glass and polymer foils. Depending on the various process parameters, self-structuring into well-separated...
The method of direct formation of horizontally aligned CNT networks on top of substrates by conventional thermal CVD with volatile catalyst is report. The main feature of the proposed method is that the temperature of the substrate is kept at 100 ÷ 150 °С, while the temperature in the reaction zone of the chamber is 730 ÷ 880 °C. The aforementioned is realized by growing CNTs and depositing CNT networks...
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