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The integration of complex biological molecules such as proteins with metal and semiconductor interfaces is limited by several inherent incompatibilities. To develop sensors based upon protein-protein interactions at such surfaces, three significant obstacles must be overcome: 1) the sensing protein must retain its native, or native-like structure, 2) the protein must be in electrical (or optical)...
Due to increased short channel effects in bulk MOS structures, multiple-gate devices on SOI substrate are leading candidates for sub-32nm nodes [1]. These devices are strongly influenced by two- or even three-dimensional effects. Circuit design requires compact models which accurately describe these effects while using a minimum of ideally structure oriented fitting parameters. For the case of short...
The conduction channel of a semiconductor heterostructure high electron mobility transistor (HEMT) can act as a plasma wave resonator for density oscillations in quasi-two-dimensional (2D) electron gas. The plasma wave is an electron density excitation, possible at frequencies significantly higher than the cut-off frequency in a short channel device. The hydrodynamic model predicts a resonance response...
Resistive memory devices based on plasma oxidized copper have been shown previously; however, the influence of the reactive ion etch (RIE) power on device operating parameters has not been established. To investigate this relationship, CuxO was produced on blanket ECD copper substrates by room temperature plasma oxidation under varying RIE powers levels. The RIE power was varied from 100–300 W, yielding...
Accurate, fast and reliable measurement of the spectral responsivity of a solar cell is an important step in evaluating the electrical performance of competing photovoltaic (PV) technologies and products. A few research groups, including one at that National Institute of Standards and Technology (NIST), have investigated ways to measure the spectral responsivity, and hence the external quantum efficiency,...
Aluminum doped zinc oxide (AZO) films were synthesized on alkali free glass substrates by sol-gel spin-coating method using two different precursors (zinc acetate and zinc nitrate). The results showed that the crystallite size decreased with increasing dopant concentration. The films were fabricated using zinc acetate (precursor 1) as a starting material show a pipe-like structure, which significantly...
III-Nitride semiconductor-based Deep UV (DUV) LEDs are emerging as an enabling technology for diverse military, homeland security, industrial and commercial markets and space exploration. Current technology allows to fabricate AlGaN-based DUV LEDs with wall-plug efficiency (WPE) between 1–2%, which is substantially lower that WPE for visible and near UV LEDs. Significant R&D efforts are under...
The usage of metal-SiO2-Si gate stacks has been pervasive in microelectronic devices for the last four decades. Since continued device miniaturization through physical scaling has reached an impasse, the community is poised for the replacement of SiO2 by HfO2 based "high-K" dielectrics. However, widespread usage of the new high-K gate stack will be hampered due to several troubling issues,...
High power device has numerous applications in display and communication systems. LDMOSFET (lateral double-diffused MOSFET) is suitable for these applications because of their high blocking voltage, low on-resistance, and high frequency performance. The basic operation of LDMOSFET [1–2] is similar to that of any MOSFET. However, the drain-source blocking voltage is in the range of 100 volts, and the...
During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent...
As requirements for infrared (IR) sensing become more stringent, demanding identification of the object rather than mere detection, imagers sensitive to a single waveband are no longer adequate in some applications. In these scenarios, the ability to “see” in multiple wavebands through a single infrared camera is indispensable. For terrestrial-based IR imaging, long-wave (LWIR) detectors are particularly...
We propose a new device structure named as Doping-less Bipolar Transistor (DBT) with Schottky Collector in this paper. This DBT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, required for post ion-implantation of the base and the emitter regions of a bipolar device, which can create complications while integrating the bipolar process with the CMOS...
Dramatic EOT shrinking and Vfb increasing were observed when implanting Ga ions into high-k/metal-gate stack. Experiments with different gate-metal thickness, dosages, ion types, and post gate-etch anneal conditions were studied. Elastic dipole theory, for the first time, is proposed and ab-initio simulations were conducted to explain the unexpected trends. This theory offers a good guide to choose...
Zinc nitride films were prepared by the rf-magnetron sputtering using Zn target in Ar-N2 plasma for 30 min at 300 W and annealed for 1 h in O2 at 300 °C. The XRD measurement indicated that the as-deposited film had polycrystalline structure with five peaks corresponding to the cubic anti-bixbyite Zn3N2 and exhibited preferred orientation (400). The annealing weakened the crystallinity and generated...
Past work on radio frequency (RF) energy harvester design mostly focused on harvesting RF energy in a single RF band [1, 2,]. While a significant portion of RF energy is concentrated in the communication band around 900 MHz, there is also abundant RF energy present in the band covering 1800 MHz to 2100 MHz. For example. Li [2011] demonstrated the design and implementation of a dual band RF energy...
RF energy harvesting has been widely investigated as a promising method of providing power to passive wireless devices or recharging the battery used in such systems. The AC input signal which is the ambient RF radiation from the available ISM band is received through the coupled antenna and converted into DC output voltage through the energy harvester chip. The energy harvester, which is a novel...
Group III-nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices [1]. The AlGaN/GaN heterostructure field-effect transistors (HFETs) have a great potential for future high-frequency and high-power applications because of the intrinsic advantages of materials such as wide band gap, high breakdown...
AlGaN/GaN HEMTs are important for high-frequency RF communication systems. However free carrier traps in the HEMTs caused by material growth issues, material interfaces, and processing issues reduce the device performance and life. We analyzed the switching performance of HEMTs and investigated locating and quantifying the traps involved. Results from multiple samples will be provided for comparisons.
Supply voltage (VDD) scaling has been an important issue as the CMOS scaling down. Scaling of devices induces large leakage current due to Short Channel Effects (SCEs). Also, Subthrehold Swing (SS) value of CMOS devices is theoretically limited to 60 mV/dec. Various structures have been proposed to overcome power dissipation problems, one of which is the TFETs [1–2]. However, TFET has two critical...
To facilitate continued CMOS technology scaling, thin-body transistor structures such as the FinFET [1] and fully depleted silicon-on-insulator (FD-SOI) MOSFET [2] have been proposed to better suppress short-channel effects (SCE) than the conventional MOSFET structure in the sub-25 nm gate length (Lg) regime. However, these structures require either more challenging fabrication processes or more expensive...
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