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The integration of organic molecules with silicon is increasingly being studied for potential uses in hybrid electronic devices. However, creating a dense and highly ordered organic monolayer on silicon with reliable metal-molecule contacts still remains a challenge. A novel technique, flip chip lamination (FCL), has been developed to create uniform, covalently bound metal-molecule-semiconductor junctions...
Although retention characteristic of charge trapping (CT) flash device is improved by using Al2O3/HfO2 blocking layer, the electron back tunneling (EBT) during erasing is still an issue. In order to overcome this issue, CT flash devices with triple blocking layers of either high/low/high (HLH) or low/high/low (LHL) electron energy barrier structures are proposed in this work. Programming, erasing,...
Gas sensing behavior of graphene with platinum nano-particles on graphene films was investigated. Synthesis of graphene was carried out on a copper substrate under the flow of methane and hydrogen gas mixture by a CVD process at the atmospheric pressure. The graphene films were transferred to different substrates after wet etching of the copper substrates. Graphene based device for gas sensing was...
Porous nickel oxide (NiO) thin films with different thicknesses were grown on alkali-free glass substrates by sol-gel method. Crystallinity and surface morphology of NiO thin films as a function of thickness were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The hydrogen gas sensing was measured to investigate the effect of thickness on the gas sensing property...
Recently, Single Photon Avalanche Diode (SPAD) draws attentions because of its applications in bio-molecule detection [1] and optical communication [2]. In order to reduce the cost and improve the detection throughput, one trend is to integrate large number of SPAD pixels with readout circuit and signal processing circuit on one silicon chip. In this paper, a SPAD is designed and simulated based on...
Floating body may cause effects on the performance of a PD SOI MOS device [1]. The floating-body-related transient behavior of a PD SOI NMOS device due to the function of the parasitic bipolar device has been reported [2]. In this paper, the modeling of the floating-body-effect-related transient behavior of a 40nm PD SOI NMOS device via the SPICE bipolar/MOS model is presented. Fig. 1 shows the SEM...
ZnO nanorods have been grown onto Indium thin Oxide (ITO) coated glass substrates by electrochemical deposition technique using ZnCl2 (0.005 M), KCl (0.1 M), solutions at the bath temperature of 80°C and 5.8 pH value. The seed layers were pre-deposited galvanostatically applying different currents such as −1.0 mA and −2.0 mA and the subsequent ZnO nanorods had been produced using the potentiostatic...
The SiGe quantum well (QW) tunneling diodes with different Si cap thickness are designed in this work to investigate the detailed mechanism of light emission for the metal-insulator-semiconductor light-emitting diode (MIS LED). At the accumulation (negative) gate bias, the electrons tunnel from the metal gate to the SiGe QW semiconductor substrate (p-type). Meanwhile, the negative gate bias also attracts...
CdS nanostructures have been grown on glass substrate by a modified chemical bath deposition method (MCBD) using CdCl2 (0.02 M), KOH (0.5 M), NH4NO3 (1.5 M) and HNCSNH (0.2 M) aqueous solutions at the bath temperature of 80°C and the pH of 10.40. Power adjustable Ar-Ion Laser beam with the powers of 150 mW, 250 mW, and 400 mW was irradiated to the glass substrates during the deposition. Optical properties...
Different Si oxide dimension (OD) geometrical features, consisting of Shallow Trench Insulator (STI) structure, and processes of fabrication such as one-side pad SiN layer and two-sides pad SiN layer are implemented to investigate the residual mechanical stress in Si oxide dimension through full process flow of modern semiconductor device. The Raman spectroscopy with polarized incoming laser light...
Integrated Optical (IO) devices have been gained much attention for chemical or biological sensing applications due to high sensibility, mechanical stability and the integration in Silicon [1–3]. In addition, the Si technology in conjunction with techniques of micromachining has enabled the creation of a variety of novel functions in Micro-Opto-Electro-Mechanical Systems (MOEMS). biological sensing...
Recently tunnel field effect transistors (TFETs) have been extensively investigated due to the ability to suppress the short channel effects [1]. However, certain drawbacks of the TFET device, particularly its high average subthreshold swing (SS) and low on-state current, hamper the device's performance [2]. Another problem with TFETs is that they exhibit ambipolar behavior, which leads to high Ioff...
Ge exhibits a high bulk hole mobilty making it an attractive channel material for pMOSFET devices [1,2]. For improving the device performance and suppressing short channel effects ultra-thin-body (UTB) Ge-on-insulator (GeOI) structures have been researched throughly [2]. Recently <110> oriented Ge-OI pMOSFETs grown on (110) surface were shown to exhibit enhanced hole mobility, which was 3 times...
As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1–2], standby power consumption [1–2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO2) is being incorporated into the gate stack of silicon based MOSFETs.
Vertically aligned core-shell p-n nanostructures are technologically significant due to their potential applications in a variety of devices such as light-emitting diodes, laser diodes, photodetectors, and solar cells. Such structures developed in III-Nitride material system are expected to increase device efficiency, partially due to mitigating detrimental effects of spontaneous electrical polarization...
Lateral Diffused MOS(LDMOS) transistors are widely used in High-Voltage(HV) applications, such as embedded Non-Volatile Memory(eNVM)[1], smart power management[2], display drivers[3] and automotive applications. They can be fabricated under various manufacturing processes such as standard CMOS technology, Bipolar-CMOS-DMOS(BCD) technology, High-Voltage CMOS technology and Silicon-On-Insulator(SOI)...
Germanium is of unique interest for CMOS technology because of its high electron and hole mobilities compared with those of its counterpart silicon [1]. Significant progress has been in germanium p-MOSFETs, while in n-MOSFETS there are some hindrances. The diffusivity and poor activation of dopants in Ge [2] will not allow the formation of shallow junctions and low resistivity source and drain regions...
Three-state behavior has been demonstrated in Si and InGaAs FETs when two layers of cladded nanodots (e.g. SiOx-cladded Si or GeOx-cladded Ge) are assembled on the thin tunnel gate insulator. The advantages of 3-state behavior in reducing device count in logic, analog-to-digital converters (ADCs), and DACs has been reported [1]. Unlike three-state QDG-FETs, four-state devices offer significant advantages...
Phase-change memory (PCM) stores information based on the PC material's property to reversibly switch between two resistance states by Joule heating with applied currents [1], and provides a new set of features combining features of the DRAM and the Flash memory. PCM on thin-film-transistor (TFT) technology can potentially offer a fast, high endurance and high-density non-volatile memory for system-on-panel...
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